1. International Technology Roadmap for Semiconductors, 2013 ed. www.itrs2.net.
2. 1 nm of local CD accuracy for 45 nm-node photomask with low sensitivity CAR for e-beam write,;Ugajin,2007
3. Relationship between resolution, line edge roughness, and sensitivity in chemically amplified resist of post-optical lithography revealed by monte carlo and dissolution simulations,;Saeki,2009
4. Study and comparison of negative tone resists for fabrication of bright field masks for 14 nm node,;Zweber,2012
5. Revisiting Mask Contact Hole Measurements,;Higuchi,2006