Planar waveguides produced by implanting Si and C ions in rutile

Abstract

Planar waveguides were generated in samples of rutile crystal (TiO2) by bombarding with two typesof ion: silicon and carbon. Rutile is used because of its anisotropic properties, particularly its birefrin-gence. The guide is generated due to damage caused by the ions in the crystal which change its index ofrefraction. Three parameters were used: the implantation ion energy, the implantation uence, and theorientation of the crystallographic planes. The refractive index prole of the irradiated sample was cal-culated and together with the value of the optical barrier the comparison was made between the dierentwaveguides generated.