ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF P-CDS/P-CDTE/ZNTE/ZNCDS HETEROJUNCTIONS

Abstract

Studies show that during thermal processing, major changes occur in p-CdS/p-CdTe/ZnTe/ZnCdS heterojunctions. The nature of the change in electrical and photoelectric properties of heterojunctions depending on thermal processing conditions shows that the volume charge layer expands due to the presence of acceptor levels near the surface of the Zn1-xCdxS layer (Fig. 1). Therefore, the capacity of p-n heterojunctions decreases. The increase in photoresponse across all spectra indicates that the compensation of donor-type natural defects with acceptor levels results in the formation of a high-resistivity layer in the near-surface layer and increases the rectification factor. Light absorption is more effective due to the high resistivity layer, which means that the utility of the absorbed beam and the accumulation of carriers with p-n heterojunctions are increased.