Author:
A Nirmalkumar,K Mythily,B ArunKumar,Jose Deepa
Abstract
Numerous soft faults in SRAM memory emerge as technological innovations scales down, resulting in single and several cell upsets. The increased use of transistors in space applications has rendered semiconductor devices more vulnerable to soft errors caused by harm from radiation. A single event upset (SEU) is occurring whenever a soft error produces a tiny bit flipped in a storage device. Because SEU faults affect system performance, they must be addressed as soon as possible. Error-correcting codes, like the method known as (7,4) hamming codes, were devised and their decoding and encoding procedures were verified. It also used to detect single errors that can be fixed. It also helps detect double errors, SECDED however repair of double errors is tough. The decoding and encoding techniques of these approaches were investigated, and all computational findings had been verified and executed in a Xilinx NEXYS 4 DDR FPGA board.
Publisher
European Alliance for Innovation n.o.
Subject
Information Systems and Management,Computer Networks and Communications,Computer Science Applications,Hardware and Architecture,Information Systems,Software
Reference11 articles.
1. M. S. M. Siddiqui, S. Ruchi, L. Van Le, T. Yoo, I. -J. Chang and T. T. -H. Kim, "SRAM Radiation Hardening Through Self-Refresh Operation and Error Correction," in IEEE Transactions on Device and Materials Reliability, vol. 20, no. 2, pp. 468-474, June 2020.
2. L. A. Aranda, O. Ruano, F. Garcia-Herrero and J. A. Maestro, "Reliability Analysis of ASIC Designs With Xilinx SRAM-Based FPGAs," in IEEE Access, vol. 9, pp. 140676-140685, 2021.
3. . Gracia-Morán, L. J. Saiz-Adalid, D. Gil-Tomás and P. J. Gil- Vicente, "Improving Error Correction Codes for Multiple-Cell Upsets in Space Applications," in IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 26, no. 10, pp. 2132-2142, Oct. 2018.
4. . Ibe, H. Taniguchi, Y. Yahagi, K. -i. Shimbo and T. Toba, "Impact of Scaling on Neutron-Induced Soft Error in SRAMs From a 250 nm to a 22 nm Design Rule," in IEEE Transactions on Electron Devices, vol. 57, no. 7, pp. 1527-1538, July 2010.
5. K. Jamal and Dr. P. Srihar et al., “Test Vector Generation using Genetic Algorithm for Fault Tolerant Systems” International Journal of Control Theory and Applications (IJCTA), 9(12), pp. 5591-5598, May 2016.