Electrical Conductivity and Magnetoresistance of Silicon Microstructures in the Vicinity to Metal-Insulator Transition

Abstract

Complex research of silicon microcrystals with specific resistance from ρ300K = 0.025 Ohm × cm to ρ300K =0.007 Ohm × cm doped with boron transport impurity to concentrations corresponding to the transition of metaldielectric and modified transition metal nickel at low temperatures to the temperature of liquefied heliumT = 4.2 K in magnetic fields up to 14 Tl. The features of electrophysical characteristics of samples at lowtemperatures in strong magnetic fields up to 14 Tl are determined due to the influence of a magnetic impurity insemiconductor-diluted magnetism and the use of such crystals in sensors of physical quantities (temperature,magnetic field, deformation) is proposed.