Investigation of Changes in Resistivity of n-Si with Temperature and Uniaxial Stress

Abstract

In this work the changes in resistivity of n‑Si with temperature and uniaxial stress X, oriented both in <100> and in [111] direction, were investigated. The value of the anisotropy parameter of mobility was obtained in the conditions of  J || X || [100] and  J ┴ X || [100] with using the experimental data concerning longitudinal and transverse tenso-resistance. The presence of the n-Si tenso-resistance was found in the conditions of  X || J ||[111], i.e., in the absence of the interminimum redistribution of charge carriers. The physical explanation of the results was presented.