Electro-Physical Properties of Ge-doped Cd1-xMnxTe (x < 0.1) Crystals
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Published:2019-07-10
Issue:2
Volume:20
Page:144-148
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ISSN:2309-8589
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Container-title:Фізика і хімія твердого тіла
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language:
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Short-container-title:PCSS
Author:
Solodin S.,Nikoniuk Ye.,Rarenko G.,Fochuk P.
Abstract
Ge-doped Cd1-xMnxTe (x = 0.02, 0.04, 0.08) crystals were grown by the Bridgman method. Carried out electrical measurements in the temperature range 280 – 420 K have found that the crystals’ hole conductivity is controlled by the deep compensated acceptors, whose ionization energy (εA) was increased with the content Mn (x) according to the relation εA = 0.6 (1 + 2х) eV. At 300 K: ρ = (108-109) (Ohm´cm), RH = (5×109-5×1010) cm3/C; mobility of current carriers ~ 50 cm2 /(V´s).
Publisher
Vasyl Stefanyk Precarpathian National University
Subject
Physical and Theoretical Chemistry,Condensed Matter Physics,General Materials Science