AN ANALYTICAL TECHNIQUE FOR EVALUATING HEAT CAPACITY OF GeS, GeSe, GeTe AND SnS SEMICONDUCTORS USING EINSTEIN-DEBYE APPROXIMATION

Abstract

A new analytical method for the evaluation of heat capacities of semiconductors (GeS, GeSe, GeTe, and SnS) has been proposed using the Einstein-Debye approximation. These formulae differ from the Debye model representations and they involve a combination of the Einstein and Debye approximations. The proposed method allows developing an increasing accuracy for the determination of the temperature dependent heat capacities of semiconductors GeS, GeSe, GeTe and SnS. The approach suggested in this study for calculation of heat capacities is very well suitable to determine other thermodynamical properties of materials. The temperature dependence of heat capacities of GeS, GeSe, GeTe and SnS semiconductors has been evaluated and shows a good agreement with literature at different temperature ranges.