Large remanent polarization and coercive force by 100% 180° domain switching in epitaxial Pb(Zr0.5Ti0.5)O3 capacitor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1433912
Reference4 articles.
1. Preparation ofPb(Zr,Ti)O3Thin Films on Ir andIrO2Electrodes
2. Epitaxial growth at PZT/Ir interface
3. Method of Distinguishing SrBi2Ta2O9Phase from Fluorite Phase Using X-Ray Diffraction Reciprocal Space Mapping
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2. Epitaxial growth of metallic buffer layer structure andc-axis oriented Pb(Mn1/3,Nb2/3)O3–Pb(Zr,Ti)O3thin film on Si for high performance piezoelectric micromachined ultrasonic transducer;Japanese Journal of Applied Physics;2017-11-21
3. Enhanced ferroelectric and photoluminescence properties in Sr1−1.5xHoxBi2Nb2O9 ceramics;Materials Research Bulletin;2013-10
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5. Phase compositions and ferroelectric properties of Pb(Zr0.52,Ti0.48)O3 thin films with different highly orientations prepared by a sol–gel route;Applied Surface Science;2010-06
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