Physics of high-efficiency 240–260 nm deep-ultraviolet lasers and light-emitting diodes on AlGaN substrate
Author:
Affiliation:
1. Microsystems Engineering, Rochester Institute of Technology, Rochester, New York 14623, USA
2. Department of Electrical and Microelectronic Engineering, Rochester Institute of Technology, Rochester, New York 14623, USA
Funder
National Science Foundation
Office of Naval Research
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5143723
Reference28 articles.
1. M. Kneissl and J. Rass, III-Nitride Ultraviolet Emitters (Springer International Publishing, Cham, 2016), p. 227.
2. Application of GaN-based ultraviolet-C light emitting diodes – UV LEDs – for water disinfection
3. Ultraviolet light-emitting diodes in water disinfection
4. Optical gas sensing: a review
5. Ultraviolet Communications: Potential and State-Of-The-Art
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1. AlGaN nanowire deep ultraviolet LEDs with polarization enhanced tunnel junction and p-AlGaN layer by molecular beam epitaxy;Journal of Vacuum Science & Technology B;2022-09
2. Effects of geometric parameters on photoemission of AlGaN nanowire array photocathode;Materials Research Express;2022-08-01
3. Reducing the polarization mismatch between the last quantum barrier and p-EBL to enhance the carrier injection for AlGaN-based DUV LEDs;Optical Materials Express;2021-05-13
4. Effects of AlInN graded polarization-dependent doped top cladding on the performance of deep ultra-violet laser diode emitting at ∼271 nm wavelength;Semiconductor Science and Technology;2020-11-11
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