Photoluminescence excitation spectra in GaAs/AlAs trench‐buried quantum wires with 20 nm wide rectangular cross‐sectional shapes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.116717
Reference13 articles.
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Anisotropic exchange interaction caused by hole-spin reorientation in (CdTe)0.5(Cd0.75Mn0.25Te)0.5 tilted superlattices grown on Cd0.74Mg0.26Te(001) vicinal surface;Journal of Crystal Growth;2005-02
2. Excitonic states inCdTe/Cd0.74Mg0.26Tequantum wires grown on vicinal substrates;Physical Review B;2003-02-04
3. Origin of disorder in self-ordered GaAs/AlGaAs quantum wires grown by OMVPE on V-grooved substrate;Journal of Crystal Growth;2000-12
4. OMVPE fabrication of continuous transitions between GaAs/AlGaAs quantum wells and V-groove quantum wires;Journal of Crystal Growth;2000-12
5. Temperature dependence of exciton lifetimes in high-density GaAs/(GaAs)4(AlAs)2 quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy;Solid-State Electronics;1998-07
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