Oxygen vacancy induced photoconductivity enhancement in Bi1-xCaxFeO3-δ nanoparticle ceramics: A combined experimental and theoretical study-Reference-Cited by-同舟云学术

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Oxygen vacancy induced photoconductivity enhancement in Bi1-xCaxFeO3-δ nanoparticle ceramics: A combined experimental and theoretical study

Published:2018-11-21 Issue:19 Volume:124 Page:195108
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Nandy Subhajit¹,Kaur Kulwinder²,Mocherla Pavana S. V.¹,Nanda B. R. K.²^ORCID,Sudakar C.¹^ORCID

Affiliation:

1. Multifunctional Materials Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600 036, India

2. Condensed Matter Theory and Computational Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600 036, India

Funder

Department of Science and Technology, Ministry of Science and Technology

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5055742

Reference47 articles.

1. Physics and Applications of Bismuth Ferrite

2. Investigation of dark and light conductivities in calcium doped bismuth ferrite thin films

3. Switchable Ferroelectric Diode and Photovoltaic Effect in BiFeO 3

4. Enhancement of Local Photovoltaic Current at Ferroelectric Domain Walls in BiFeO3

5. Role of domain walls in the abnormal photovoltaic effect in BiFeO3

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1. Defects-Induced Multifunctional Properties in BiFeO3;Indian Institute of Metals Series;2024

2. Role of defects in multiferroic nanoparticles;Metal Oxide Defects;2023

3. Comparison of electron irradiation on the formation of surface defects in situ and post thin-film LiF/Si(111) deposition;Thin Solid Films;2021-10

4. Photoconductivity and Photovoltaic Studies on Polycrystalline Bi1−M′ Fe1−M″ O3−δ (M′ = K+ and Cs+; M″ = Ti4+; x = y = 0 and 0.1) Thin Films;Thin Solid Films;2021-09

5. Spin-casted (Gd–Zn) co-doped BiFeO3 thin films for sustainable oxide-electronics;Materials Science in Semiconductor Processing;2021-09

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