INFLUENCE OF IONIZED IMPURITY SCATTERING ON GUNN EFFECT AND IMPACT IONIZATION IN CdTe
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1651908
Reference7 articles.
1. Microwave oscillations of current in III–V semiconductors
2. Instabilities of Current in III–V Semiconductors
3. The Gunn effect in polar semiconductors
4. For example, see IEEE Trans. on Electron Dev.ED‐13(1966).IETDAI0018-9383
5. The intervalley transfer mechanism of negative resistivity in bulk semiconductors
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1. Electron bistability and switching effects in Mo/p-CdTe/Mo structure;Journal of Materials Science: Materials in Electronics;2020-01-29
2. Ultra-short channel GaN high electron mobility transistor-like Gunn diode with composite contact;Journal of Applied Physics;2014-09-07
3. References;Semiconductors and Semimetals;1978
4. Applications of CdTe. A review;Revue de Physique Appliquée;1977
5. Chapter 1 Low-Field Electron Transport;Semiconductors and Semimetals;1975
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