Microstructural studies of reactive ion etched silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97684
Reference7 articles.
1. Parameter and Reactor Dependence of Selective Oxide RIE in CF 4 + H 2
2. Damage induced in Si by ion milling or reactive ion etching
3. Rutherford backscattering studies of plasma‐etched silicon
4. Near‐Surface Damage and Contamination after CF 4 / H 2 Reactive Ion Etching of Si
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