Photoelectrochemical oxidation-treated AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with oxidized layer/Ta2O5/Al2O3 gate dielectric stack-Reference-Cited by-同舟云学术

Photoelectrochemical oxidation-treated AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with oxidized layer/Ta2O5/Al2O3 gate dielectric stack

Published:2013-08-19 Issue:8 Volume:103 Page:082104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee Ching-Ting,Chiou Ya-Lan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4819159

Reference28 articles.

1. Low resistance bilayer Nd/Al ohmic contacts on n-type GaN

2. Direct contact mechanism of Ohmic metallization to AlGaN/GaN heterostructures via Ohmic area recess etching

3. Sensing mechanisms of Pt/β-Ga2O3/GaN hydrogen sensor diodes

4. Comparison of MOS and Schottky W/Pt–GaN diodes for hydrogen detection

5. Current spreading of III-nitride light-emitting diodes using plasma treatment

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