Temperature dependence of DC transport characteristics for a two-dimensional electron gas in an undoped Si/SiGe heterostructure
Author:
Affiliation:
1. Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan
2. Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan
3. National Nano Device Laboratories, Hsin-Chu 30078, Taiwan
Funder
Ministry of Science and Technology, Taiwan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5018636
Reference18 articles.
1. Extremely high electron mobility in Si/SiGe modulation‐doped heterostructures
2. High electron mobility in strained Si channel of heterostructure with abrupt interface
3. Extremely high electron mobility in isotopically-enriched 28Si two-dimensional electron gases grown by chemical vapor deposition
4. Schottky gating high mobility Si/Si 1−x Ge x 2D electron systems
5. Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots
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3. Plazmennye vozbuzhdeniya v SiGe/Si kvantovykh yamakh;Письма в Журнал экспериментальной и теоретической физики;2023-12-15
4. Erratum to: Plasma Excitations in SiGe/Si Quantum Wells;JETP Letters;2023-08
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