Ferroelectric Bloch-line switching: A paradigm for memory devices?-Reference-Cited by-同舟云学术

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Ferroelectric Bloch-line switching: A paradigm for memory devices?

Published:2014-12-22 Issue:25 Volume:105 Page:252904
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Salje E. K. H.¹^ORCID,Scott J. F.²³

Affiliation:

1. Department of Earth Sciences, Cambridge University, Downing Street, Cambridge CB2 3EQ, United Kingdom

2. Cavendish Laboratory, Department of Physics, Cambridge University, Downing Street, Cambridge CB3 0HE, United Kingdom

3. Department of Chemistry and Department of Physics, University of St. Andrews, St. Andrews, United Kingdom

Funder

Engineering and Physical Sciences Research Council (EPSRC)

Leverhulme Trust

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4905001

Reference62 articles.

1. Vortex ferroelectric domains

2. Clock-model description of incommensurate ferroelectric films and of nematic-liquid-crystal films

3. Nanodomain faceting in ferroelectrics

4. Exploring Vertex Interactions in Ferroelectric Flux-Closure Domains

5. Topology of the polarization field in ferroelectric nanowires from first principles

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3. Ferroelectric Domain Wall Memory and Logic;ACS Applied Electronic Materials;2023-08-22

4. Elastic softening and hardening at intersections between twin walls and surfaces in ferroelastic materials;APL Materials;2023-07-01

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