Monolayer thickness control of InxGa1−xAs/GaAs quantum wells grown by metalorganic molecular beam epitaxy-Reference-Cited by-同舟云学术

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Monolayer thickness control of InxGa1−xAs/GaAs quantum wells grown by metalorganic molecular beam epitaxy

Published:1994-03-21 Issue:12 Volume:64 Page:1523-1525
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Courboulès B.,Massies J.,Deparis C.,Grandjean N.,Leymarie J.,Monier C.,Vasson A. M.,Vasson A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.111879

Reference25 articles.

1. Chemical beam epitaxy of InP and GaAs

2. Extremely high quality Ga0.47In0.53As/InP quantum wells grown by chemical beam epitaxy

3. Chemical beam epitaxy of indium phosphide

4. Growth of high purity InP by metalorganic MBE (CBE)

5. Luminescence and transport properties of high quality InP grown by CBE between 450 and 550°C

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interface Effects on the Photoluminescence of GaAs/GaInP Quantum Wells;Japanese Journal of Applied Physics;1998-01-15

2. Indium surface segregation during chemical beam epitaxy of and heterostructures;Journal of Crystal Growth;1997-05

3. Dislocation introduction in the initial stages of MBE growth of highly strained structures;Journal of Crystal Growth;1996-11

4. Real‐time investigation of In surface segregation in chemical beam epitaxy of In0.5Ga0.5P on GaAs (001);Applied Physics Letters;1996-06-17

5. Molecular beam epitaxy of quantum well structures;Journal of Crystal Growth;1996-03

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