Strain and stacking induced topological phase transition in bipolar ferromagnetic semiconductor OsClBr

Abstract

The combination of valleytronics and topology has great potential significance in condensed matter and material physics. Here, based on first-principles calculations, we predict a dipolar ferromagnetic semiconductor OsClBr. Benefiting from strong spin–orbit coupling and the intrinsic exchange interaction of localized d electrons, spontaneous valley polarization occurs. In addition, the tensile strain can induce topological phase transitions between ferrovalley, half-valley-metal, and valley-polarization quantum anomalous Hall (VQAH) phases, which can be attributed to the band inversion between dz2 and dxy/dx2−y2 orbitals of Os atom. Moreover, stacking-dependent topological phase transitions can be found in bilayer OsClBr, and the robustness of VQAH phase in b − 1 configuration under a wide strain range has been proved, which is greatly beneficial for the regulation of quantum states. Our work provides a potential opportunity for the preparation and application of low-power consumption electronics devices.