Surface analysis of a GaAs electron source using Rutherford backscattering spectroscopy-Reference-Cited by-同舟云学术

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Surface analysis of a GaAs electron source using Rutherford backscattering spectroscopy

Published:1994-07-18 Issue:3 Volume:65 Page:301-302
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Calabrese R.,Guidi V.,Lenisa P.,Maciga B.,Ciullo G.,Della Mea G.,Egeni G. P.,Lamanna G.,Rigato V.,Rudello V.,Yang B.,Zandolin S.,Tecchio L.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.112353

Reference8 articles.

1. Photoemission from activated gallium arsenide. I. Very-high-resolution energy distribution curves

2. A High Current, Short Pulse, RF Synchronized Electron Gun for the Stanford Linear Accelerator

3. Intense source of monochromatic electrons: Photoemission from GaAs

4. Long‐lifetime high‐intensity GaAs photosource

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