Density of midgap states and Urbach edge in chemically vapor deposited hydrogenated amorphous silicon films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337396
Reference34 articles.
1. Growth and defect chemistry of amorphous hydrogenated silicon
2. Properties of Intrinsic a-Si Films Deposited From Higher Order Silanes by Chemical Vapor Deposition
3. Calculation of the dynamic response of Schottky barriers with a continuous distribution of gap states
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1. Hydrogenated amorphous silicon films with significantly improved stability;Solar Energy Materials and Solar Cells;2001-04
2. Correlation between the valence‐ and conduction‐band‐tail energies in hydrogenated amorphous silicon;Applied Physics Letters;1996-11-18
3. POLYCRYSTALLINE AND AMORPHOUS SOLAR CELLS;Solar Energy Conversion;1995
4. In SituHydrogenation of Amorphous Silicon Prepared by Thermal Decomposition of Disilane;Japanese Journal of Applied Physics;1993-10-01
5. An approach to study the effect of the band tail widths on the photovoltaic performance of p-i-n a-Si: H solar cells;Journal of Non-Crystalline Solids;1993-10
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