The effect of absorber doping on electrical and optical properties of nBn based type-II InAs/GaSb strained layer superlattice infrared detectors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3230069
Reference25 articles.
1. 128 x 128 MWIR InSb focal plane and camera system
2. A new semiconductor superlattice
3. Proposal for strained type II superlattice infrared detectors
4. Interface-induced suppression of the Auger recombination in type-II InAs/GaSb superlattices
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications;Two-dimensional Materials for Photodetector;2018-04-04
2. nBn Based InAs/GaSb Type II Superlattice Detectors with an N-type Barrier Doping for the Long Wave Infrared Detection;Journal of the Korean Vacuum Society;2013-11-30
3. A multi-color quantum well photodetector for mid- and long-wavelength infrared detection;Semiconductor Science and Technology;2011-11-16
4. Varshni parameters for InAs/GaSb strained layer superlattice infrared photodetectors;Journal of Physics D: Applied Physics;2011-01-28
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