Reducing the threshold current density of AlInGaAs∕GaAs double quantum well lasers with n-type delta doping
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1845592
Reference11 articles.
1. A pulsed high-power quantum well laser using an asymmetric waveguide
2. n‐type delta‐doped quantum well lasers with extremely low transparency current density
3. New materials for diode laser pumping of solid-state lasers
4. Threshold current density reduction of strained AlInGaAs quantum-well laser
5. Threshold current density reduction of strained AlInGaAs quantum-well laser
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Large Tolerance of Lasing Properties to Impurity Defects in GaAs(Sb)‐AlGaAs Core‐Shell Nanowire Lasers;Advanced Functional Materials;2023-12-08
2. InGaAs/GaAs 0.98-$\mu{\hbox {m}}$ Low-Divergence Central-Lobe Semiconductor Lasers With $\delta$-Doped Resonant Tunneling Quantum Wells;IEEE Journal of Quantum Electronics;2009-06
3. Very low transparency currents in double quantum well InGaAs semiconductor lasers with δ-doped resonant tunneling;Applied Physics Letters;2008-01-14
4. Resonant control of the characteristic temperatures T0 and T1 of AlInGaAs 0.8μm semiconductor lasers with delta-doped tunneling quantum wells;Journal of Applied Physics;2007-02
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