Affiliation:
1. Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, College of Physics and Energy, Fujian Normal University 1 , Fuzhou 350117, China
2. Fujian Provincial Engineering Technology Research Center of Solar Energy Conversion and Energy Storage 2 , Fuzhou 350117, China
Abstract
Spin gapless semiconductor (SGS) presents abundant electric and magnetic properties and is highly sensitive to external factors, such as current, electric field, magnetic field, and stress. This paper reports on a PbPd0.9Co0.1O2/PMNPT(001) laminate thin film with the “SGS/ferroelectrics” structure, which exhibits significant current-induced resistance (I-ER) effect. More importantly, the colossal static electric-field-induced resistance (E-ER) effect in such a laminate film was observed for the first time. The introduction of lattice defects (Pb vacancies) induces a local electric field, electron spin ordering state, and ferroelectric polarization field effect to explain the excellent physical properties. The reported laminate thin film composite exhibits promising application potential in spintronic devices, composite sensor units, storage systems, and other low-energy semiconductor electronic device fields. This work proposes an alternative way to investigate the novel properties for spin gapless semiconductors and expand the research fields of multi-field modulation effect in magnetoelectric composites.
Funder
National Natural Science Foundation of China
National Key R&D Program of China
Natural Science Foundation of Fujian Province
Subject
General Physics and Astronomy