Centers at junction boundaries in AlGaAs single heterojunction red light‐emitting diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336365
Reference38 articles.
1. Heterojunction‐induced phenomena in Hall effect and photoconductivity measurements of epitaxial AlxGa1−xAs
2. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optical investigation of theDXcenters in GaAs under hydrostatic pressure;Physical Review B;1995-06-15
2. Determination of the Np and pP heterojunction quality in AlxGa1-xAs LPE-grown double heterostructures from the capacitance measurements;Semiconductor Science and Technology;1992-04-01
3. Carrier transport processes in p-n junction layers with a distribution of trap levels;Solid-State Electronics;1991-09
4. Photocurrent Investigation on a Graded Heterojunction;physica status solidi (a);1990-12-16
5. DX CENTERS AND THE LOW TEMPERATURE BEHAVIOR OF AlGaAs/GaAs HETEROJUNCTION BIPOLAR TRANSISTORS;Defect Control in Semiconductors;1990
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