Modeling of long-term defect evolution in heavy-ion irradiated 3C-SiC: Mechanism for thermal annealing and influences of spatial correlation
Author:
Affiliation:
1. School of Nuclear Science and Technology, Xi'an Jiaotong University, Xi'an 710049, China
2. IMDEA Materiales, C/ Eric Kandel, 2, Tecnogetafe, 28906 Getafe, Madrid, Spain
Funder
State key laboratory of intense pulsed radiation simulation and effect
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4902145
Reference73 articles.
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5. 4H-SiC MESFETs behavior after high dose irradiation
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