Influence of the interface on the electronic channel switching of a Fe–Ag thin film on a Si substrate-Reference-Cited by-同舟云学术

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Influence of the interface on the electronic channel switching of a Fe–Ag thin film on a Si substrate

Published:2009-08-24 Issue:8 Volume:95 Page:082103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Alonso J.,Fdez-Gubieda M. L.,Sarmiento G.,Barandiarán J. M.,Svalov A.,Orue I.,Chaboy J.,Barquín L. Fernández,Meneghini C.,Neisius T.,Kawamura N.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3205124

Reference10 articles.

1. Magnetoelectronics

2. Electrical spin-injection into silicon from a ferromagnetic metal/tunnel barrier contact

3. Channel switching and magnetoresistance of a metal-SiO2-Si structure

4. Magnetic and Magnetotransport Properties of Co Thin Films on Si

5. Anomalous metal-to-insulator transition in FeSi films deposited on SiO2∕Si substrates

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