Determination of surface‐ and bulk‐generation currents in low‐leakage silicon MOS structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90205
Reference10 articles.
1. On the separation of bulk and surface components of lifetime using the pulsed MOS capacitor
2. Interpretation of surface and bulk effects using the pulsed MIS capacitor
3. Separation of surface and bulk components in MOS-C generation rate measurements
4. Carrier generation at the Si‐SiO2interface under pulsed conditions
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