Stable single-frequency operation of a high-power external cavity tapered diode laser at 780 nm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119876
Reference12 articles.
1. Two-stage injection locking of high-power semiconductor arrays
2. Frequency-doubled monolithic master oscillator power amplifier laser diode
3. Semiconductor amplifiers and lasers with tapered gain regions
4. Operating characteristics of a high-power monolithically integrated flared amplifier master oscillator power amplifier
5. 1 W CW single frequency, diffraction-limited unstable resonator semiconductor laser with distributed Bragg reflector mirrors
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2. Theoretical and experimental analysis of high-power frequency-stabilized semiconductor master oscillator power-amplifier system;Applied Optics;2016-04-05
3. 15.1 Edge emitters with external cavities;Laser Systems;2011
4. High-Power Tapered Unstable-Resonator Laser Diode With a Fiber-Bragg-Grating Reflector;IEEE Photonics Technology Letters;2009-08
5. Generation of more than 300 mW diffraction-limited light at 405 nm by second-harmonic generation of a tapered diode laser with external cavity feedback;Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications VI;2007-02-08
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