Widely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371111
Reference29 articles.
1. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
2. Critical layer thickness for self-assembled InAs islands on GaAs
3. Optical transitions and carrier relaxation in self assembled InAs/GaAs quantum dots
4. Carrier relaxation and electronic structure in InAs self-assembled quantum dots
5. Excited states in self‐organized InAs/GaAs quantum dots: Theory and experiment
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