Epitaxial growth of 3C‐SiC on Si by low‐pressure chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97596
Reference10 articles.
1. Growth and Properties of β‐SiC Single Crystals
2. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices
3. High‐temperature electrical properties of 3C‐SiC epitaxial layers grown by chemical vapor deposition
4. Schottky barrier diodes on 3C‐SiC
5. LOW‐TEMPERATURE EPITAXY OF β‐SiC BY REACTIVE DEPOSITION
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