Nonlinear optical absorption of beryllium isoelectronic centers doped in silicon waveguides-Reference-Cited by-同舟云学术

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Nonlinear optical absorption of beryllium isoelectronic centers doped in silicon waveguides

Published:2018-10 Issue:14 Volume:113 Page:141101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sumikura Hisashi¹²,Kuramochi Eiichi¹²^ORCID,Notomi Masaya¹²

Affiliation:

1. NTT Nanophotonics Center, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

2. NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5046336

Reference32 articles.

1. New Radiative Recombination Processes Involving Neutral Donors and Acceptors in Silicon and Germanium

2. Localized exciton bound to an isoelectronic trap in silicon

3. Optical properties of copper in silicon: Excitons bound to isoelectronic copper pairs

4. Isoelectronic bound excitons in In- and T1-doped Si: A novel semiconductor defect

5. Optical emission at 1.32 μm from sulfur‐doped crystalline silicon

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. ON current enhancement and variability suppression in tunnel FETs by the isoelectronic trap impurity of beryllium;Japanese Journal of Applied Physics;2021-01-29

2. Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III–nitrides, III–oxides, and two-dimensional materials;Journal of Semiconductors;2019-12-01

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