Current change due to artificial patterning of the number of ferroelectric domain walls and nonvolatile memory characteristics-Reference-Cited by-同舟云学术

Current change due to artificial patterning of the number of ferroelectric domain walls and nonvolatile memory characteristics

Published:2021-09-20 Issue:12 Volume:119 Page:122901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Shin Hyun Wook¹^ORCID,Son Jong Hwa²^ORCID,Son Jong Yeog¹²^ORCID

Affiliation:

1. Department of Applied Physics, Institute of Natural Sciences, and Integrated Education Institute for Frontier Science and Technology, Kyung Hee University, Yongin 17104, Republic of Korea

2. V-memory Corp. Heungdeok IT Valley B605, 13, Heungdeok 1-ro, Giheung-gu, Yongin-si, Gyeonggi-do, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0054015

Reference30 articles.

1. Tbit/inch2 ferroelectric data storage based on scanning nonlinear dielectric microscopy

2. Surface charge retention and enhanced polarization effect on ferroelectric thin films

3. Ferroelectricity at the Nanoscale: Local Polarization in Oxide Thin Films and Heterostructures

4. Writing polarization bits on the multiferroic BiMnO3 thin film using Kelvin probe force microscope

5. Selective control of multiple ferroelectric switching pathways using a trailing flexoelectric field

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