Barrier reduction via implementation of InGaN interlayer in wafer-bonded current aperture vertical electron transistors consisting of InGaAs channel and N-polar GaN drain
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
Funder
Air Force Office of Scientific Research (AFOSR)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4906074
Reference24 articles.
1. fT = 688 GHz and fmax = 800 GHz in Lg = 40 nm In0.7Ga0.3As MHEMTs with gm_max > 2.7 mS/µm
2. N-polar GaN/InAlN MIS-HEMT with 400-GHz ƒmax
3. 130nm InP DHBTs with ft >0.52THz and fmax >1.1THz
4. Continuous Wave Operation of a Mid-Infrared Semiconductor Laser at Room Temperature
5. Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting
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