Observation of critical gate oxide thickness for substrate-defect related oxide failure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124659
Reference5 articles.
1. Medium Field Breakdown Origin on Metal Oxide Semiconductor Capacitor Containing Grown-in Czochralski Silicon Crystal Defects
2. Influence of Crystal-Originated “Particle” Microstructure on Silicon Wafers on Gate Oxide Integrity
3. Influence of Crystal Originated Particles on Gate Oxide Breakdown
4. Two-dimensional thermal oxidation of silicon—I. Experiments
5. Oxide Growth Effects in Micron and Submicron Field Regions: A Comparison Between Wet and Dry Oxidation
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1. Defects in Monocrystalline Silicon;Springer Handbook of Electronic and Photonic Materials;2017
2. Atomic Layer Control for Suppressing Extrinsic Defects in Ultrathin SiON Gate Insulator of Advanced Complementary Metal–Oxide–Semiconductor Field-Effect Transistors;Japanese Journal of Applied Physics;2010-04-20
3. Dielectric thinning model applied to metal insulator metal capacitors with Al2O3 dielectric;Microelectronics Reliability;2009-12
4. Post-Breakdown Characteristics of Extrinsic Failure Modes for Ultra-Thin Gate Oxides;2006 IEEE International Reliability Physics Symposium Proceedings;2006-03
5. Defects in Monocrystalline Silicon;Springer Handbook of Electronic and Photonic Materials;2006
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