Analysis of switching dynamics of asymmetric Fabry–Perot symmetric self-electro-optic effect devices with extremely shallow quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366002
Reference24 articles.
1. The quantum well self-electrooptic effect device: Optoelectronic bistability and oscillation, and self-linearized modulation
2. Evolution of the SEED technology: bistable logic gates to optoelectronic smart pixels
3. Symmetric self-electrooptic effect device: optical set-reset latch, differential logic gate, and differential modulator/detector
4. High-contrast reflection modulation at normal incidence in asymmetric multiple quantum well Fabry-Perot structure
5. Extremely low-voltage Fabry-Perot reflection modulators
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1. Micro/nano-scale integrated photonic devices and circuits: issues and challenges;Materials and Devices for Optical and Wireless Communications;2002-08-30
2. Ultrafast all-optical shift register and its perspective application for optical fast packet switching;IEEE Journal of Selected Topics in Quantum Electronics;2002-05
3. Multiply interconnected GaAs/AlGaAs quantum-well p-i-n-i-p-type diodes for high-performance all-optical bistable and oscillation device applications;SPIE Proceedings;2000-04-19
4. Temporal responses of a symmetric self-electro-optic effect device based on Wannier–Stark localization;Solid-State Electronics;1999-12
5. Electroabsorption in extremely shallow quantum wells: Comparison between theory and experiment;Journal of Applied Physics;1999-05-15
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