Effects of hydrogen incorporation in GaMnN-Reference-Cited by-同舟云学术

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Effects of hydrogen incorporation in GaMnN

Published:2003-12-29 Issue:26 Volume:83 Page:5458-5460
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Baik K. H.,Frazier R. M.,Thaler G. T.,Abernathy C. R.,Pearton S. J.,Kelly J.,Rairigh R.,Hebard A. F.,Tang W.,Stavola M.,Zavada J. M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1637151

Reference24 articles.

1. Magnetic properties of n-GaMnN thin films

2. Magnetotransport of p-type GaMnN assisted by highly conductive precipitates

3. Magnetic and structural properties of Mn-implanted GaN

4. Indication of ferromagnetism in molecular-beam-epitaxy-derived N-type GaMnN

5. Origin of high-temperature ferromagnetism in (Ga,Mn)N layers grown on 4H–SiC(0001) by reactive molecular-beam epitaxy

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Critical Review of Current Studies on Hydrogen Defect in Diluted Magnetic Semiconductors and Relative Ferroelectric Materials for Smart Electronic Applications;Journal of Superconductivity and Novel Magnetism;2022-09-30

2. Oxygen vacancies mediated ferromagnetism in hydrogenated Zn0.9Co0.1O film;AIP Advances;2018-05

3. Oxidized Mn:Ge magnetic semiconductor: Observation of anomalous Hall effect and large magnetoresistance;Physica B: Condensed Matter;2018-03

4. Hydrogen enhanced magnetization and exchange interaction in amorphous (FeCo) 0.70 Ge 0.30 -H films;Journal of Alloys and Compounds;2016-02

5. Effects of hydrogen on Mn-doped GaN: A first principles calculation;Physica B: Condensed Matter;2013-09

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