Probing the strength of light–matter interaction in semiconductor microcavities by using resonant-mode shifts in temperature-dependent photoluminescence spectra-Reference-Cited by-同舟云学术

Probing the strength of light–matter interaction in semiconductor microcavities by using resonant-mode shifts in temperature-dependent photoluminescence spectra

Published:2023-08-01 Issue:8 Volume:11 Page:
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:

Author:

Wu Sheng-Chan¹²³^ORCID,Yang Chung-Xian¹^ORCID,Huang Jer-Shing²³⁴⁵^ORCID,Chang Yia-Chung²^ORCID,Chien Ching-Hang⁶,Hsu Hsu-Cheng¹⁷^ORCID

Affiliation:

1. Department of Photonics, National Cheng Kung University 1 , Tainan 701, Taiwan

2. Research Center for Applied Sciences, Academia Sinica 2 , Taipei 11529, Taiwan

3. Leibniz Institute of Photonic Technology 3 , 07745 Jena, Germany

4. Institute of Physical Chemistry and Abbe Center of Photonics, Friedrich-Schiller-Universität Jena 4 , 07743 Jena, Germany

5. Department of Electrophysics, National Yang Ming Chiao Tung University 5 , Hsinchu 30010, Taiwan

6. Institute of Lighting and Energy Photonics, National Yang Ming Chiao Tung University 6 , Tainan 71150, Taiwan

7. Program on Key Materials, Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung University 7 , Tainan 701, Taiwan

Abstract

The Rabi-splitting energy represents the strength of light–matter interaction. This quantity is a good benchmark for evaluating the performance of light-modulation devices. Herein, we adopt ZnO microrods as microcavities for whispering gallery modes and propose a convenient method for estimating the light–matter coupling strength based on the shifts of resonant modes in temperature-dependent photoluminescence spectra from 295 to 77 K. Both temperature-dependent index dispersion and Rabi splitting can be extracted. Additionally, the Rabi-splitting energy of bulk ZnO at 0 K is estimated to be about 289 meV.

Funder

National Science and Technology Council

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

https://pubs.aip.org/aip/apm/article-pdf/doi/10.1063/5.0160026/18073678/081102_1_5.0160026.pdf

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