Separation of terahertz and DC conductivity transitions in epitaxial vanadium dioxide films

Author:

Lu Chang12ORCID,Gao Min2ORCID,Liu Junxiao3ORCID,Lu Yantong3,Wen Tianlong3ORCID,Lin Yuan24

Affiliation:

1. Department of Electronic Communication and Technology, Shenzhen Institute of Information Technology 1 , Shenzhen 518172, China

2. School of Materials and Energy, University of Electronic Science and Technology of China 2 , Chengdu 610054, China

3. School of Electronic Science and Technology, University of Electronic Science and Technology of China 3 , Chengdu 610054, China

4. Engineering Cooperation on Applied Medicine Research Center, University of Electronic Science and Technology of China 4 , Chengdu 610054, China

Abstract

Terahertz (THz) light, probing electronic responses near the Fermi level, is closely linked to DC transport. In this study, we investigate the in situ THz and DC conductivity of epitaxial VO2 films near the heating-induced insulator–metal transition. We find that the THz conductivity transition occurs at lower temperatures than the DC conductivity transition, with the separation increasing with film thickness and crystallization quality. Analysis of the complex conductivity spectra attributes this separation to released carrier confinement at THz frequencies. Our findings contribute to a deeper understanding of electron dynamics in VO2 films.

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

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