Forming gas annealing on physical characteristics and electrical properties of Sr0.8Bi2Ta2O9/Al2O3/Si capacitors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1588362
Reference21 articles.
1. Ferroelectric non-volatile memories for low-voltage, low-power applications
2. Forming gas annealing effects on the microstructure and ferroelectricity of SrBi2Ta2O9 thin films prepared by metalorganic decomposition
3. Investigation of hydrogen induced changes in SrBi2Ta2O9 ferroelectric films
4. Degradation mechanisms of SrBi2Ta2O9 ferroelectric thin film capacitors during forming gas annealing
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1. Fabrication and characterization of Sr0.8Bi2.2Ta2O9 /Al2O3 gate stack for ferroelectric field effect transistors;Applied Physics A;2021-01-15
2. Co-60 gamma radiation influences on the electrochemical, physical and electrical characteristics rare-earth dysprosium oxide (Dy2O3);Radiation Physics and Chemistry;2020-06
3. Evolutions on surface chemistry, microstructure, morphology and electrical characteristics of SnO2/p-Si heterojuction under various annealing parameters;Journal of Alloys and Compounds;2019-03
4. Comparative Study of Hydrogen- and Deuterium-Induced Degradation of Ferroelectric (Pb,La)(Zr,Ti)O3Capacitors Using Time-of-Flight Secondary Ion Measurement;IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control;2016-10
5. Effect of Hydrogen on Electrical Properties of Metal-Ferroelectric (SrBi2Ta2O9)–Insulator (HfTaO)–Silicon Capacitor;IEEE Electron Device Letters;2015-08
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