Correlation of the physical properties and the interface morphology of AlGaAs/GaAs heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1588360
Reference23 articles.
1. Fundamental research and device applications of molecular beam epitaxy grown heterostructures
2. Effect of strained InGaAs step bunching on mobility and device performance in n-InGaP/InGaAs/GaAs pseudomorphic heterostructures grown by metalorganic vapor phase epitaxy
3. Experimental investigation of structures of interior interfaces in GaAs
4. Atomic scale properties of interior interfaces of semiconductor heterostructures as determined by quasi-digital highly selective etching and atomic force microscopy
5. Effect of MOVPE growth interruptions on the gallium arsenide interior interface morphology
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2. Correlation of optical properties and interface morphology in type-II semiconductor heterostructures;Journal of Physics: Condensed Matter;2018-11-30
3. Optics, morphology, and growth kinetics of GaAs/AlxGa1−xAs quantum wells grown on vicinal substrates by metalorganic vapor phase epitaxy;Physical Review B;2011-10-17
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5. Realistic heterointerface model for excitonic states in growth-interrupted GaAs quantum wells;Physical Review B;2006-08-08
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