Effect of tunnel injection through the Schottky gate on the static and noise behavior of GaInAs/AlInAs high electron mobility transistor-Reference-Cited by-同舟云学术

Effect of tunnel injection through the Schottky gate on the static and noise behavior of GaInAs/AlInAs high electron mobility transistor

Published:2014-12-21 Issue:23 Volume:116 Page:234502
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Moro-Melgar Diego¹,Mateos Javier²,González Tomás²,Vasallo Beatriz G.²

Affiliation:

1. Observatoire de Paris, LERMA, 77 avenue Denfert Rochereau 75014 Paris, France

2. Departamento de Física Aplicada, Universidad de Salamanca, Plaza de la Merced s/n, 37008 Salamanca, Spain

Funder

ConsejerÃa de EducaciÃ³n. Junta de Castilla y Leon though the project SA052U13

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4903971

Reference32 articles.

1. K. Shinohara , Y. Yamashita , A. Endoh , I. Watanabe , K. Hikosaka , T. Mimura , S. Hiyamizu , and T. Matsui , in Proc. 16th Int. Conf. Indium Phosphide and Related Materials, IEEE Catalog 04CH37589, Kagoshima, Japan (2004), p. 721.

2. Pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As HEMTs with an ultrahigh f/sub T/ of 562 GHz

3. Design Optimization of AlInAs–GaInAs HEMTs for Low-Noise Applications

4. Monte Carlo simulator for the design optimization of low-noise HEMTs

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