The dependence of Schottky junction (I–V) characteristics on the metal probe size in nano metal–semiconductor contacts-Reference-Cited by-同舟云学术

The dependence of Schottky junction (I–V) characteristics on the metal probe size in nano metal–semiconductor contacts

Published:2018-05 Issue:5 Volume:8 Page:055122
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Rezeq Moh’d¹²,Ali Ahmed¹,Patole Shashikant P.¹,Eledlebi Khouloud¹,Dey Ripon Kumar²,Cui Bo²

Affiliation:

1. Department of Physics, and Department of Electrical and Computer Engineering, Khalifa University of Science and Technology, POB 127788 Abu Dhabi, United Arab Emirates

2. Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada

Funder

Khalifa University of Science and Technology

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5035400

Reference30 articles.

1. Reduction of the Schottky barrier height on silicon carbide using Au nano-particles

2. Scanning tunneling microscope study of nanosized metal–semiconductor contacts between ErSi2 nanoislands and Si(001) substrate

3. Nano-scale Schottky contacts: ultrafast drift-diffusion dynamics studied in the optical near field

4. Nanoscale Electrical and Structural Characterization of Gold/Alkyl Monolayer/Silicon Diode Junctions

5. Statistical Study on the Schottky Barrier Reduction of Tunneling Contacts to CVD Synthesized MoS2

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