Electronic structure of GaN nanowire studied by x-ray-absorption spectroscopy and scanning photoelectron microscopy-Reference-Cited by-同舟云学术

Electronic structure of GaN nanowire studied by x-ray-absorption spectroscopy and scanning photoelectron microscopy

Published:2003-06-02 Issue:22 Volume:82 Page:3949-3951
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chiou J. W.,Jan J. C.,Tsai H. M.,Pong W. F.,Tsai M.-H.,Hong I.-H.,Klauser R.,Lee J. F.,Hsu C. W.,Lin H. M.,Chen C. C.,Shen C. H.,Chen L. C.,Chen K. H.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1579871

Reference21 articles.

1. High‐brightness InGaN/AlGaN double‐heterostructure blue‐green‐light‐emitting diodes

2. Semiconductor Clusters, Nanocrystals, and Quantum Dots

3. Semiconductor Clusters, Nanocrystals, and Quantum Dots

4. Control of Thickness and Orientation of Solution-Grown Silicon Nanowires

5. Control of Thickness and Orientation of Solution-Grown Silicon Nanowires

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