Effect of a magnetic field on the gate current in heterostructure field‐effect transistors-Reference-Cited by-同舟云学术

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Effect of a magnetic field on the gate current in heterostructure field‐effect transistors

Published:1990-05-14 Issue:20 Volume:56 Page:2028-2030
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen You‐jun,Dahlberg E. Dan,Shur M.,Akinwande A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.103007

Reference6 articles.

1. Annealing kinetics of electron‐irradiated GaAs heteroface solar cells in the range 175–200 °C

2. New negative resistance regime of heterostructure insulated gate transistor (HIGFET) operation

3. A new and simple model for GaAs heterojunction FET gate characteristics

4. Current—Voltage and capacitance—Voltage characteristics of modulation-doped field-effect transistors

5. Self-aligned modulation-doped (Al,Ga)As/GaAs field-effect transistors

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Coherency strain effects in metallic bilayers;Journal of Physics: Condensed Matter;1992-04-13

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