The origin of aging in Al–SiO2–Si tunnel diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363303
Reference12 articles.
1. Metal-silicon Schottky barriers
2. Aluminum—Silicon Schottky barriers and ohmic contacts in integrated circuits
3. Barrier Height and Its Instability in Al-Ultrathin SiO2–n/p-Si Devices
4. Abstract: Chemical structure of the Al–SiO2 interface
5. Dipole layers at the metal‐SiO2interface
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2. Testing metal-dielectric-semiconductor tunnel structures on p-silicon as nuclear particle detectors;Technical Physics Letters;2009-05
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4. Admittance of metal–insulator–semiconductor tunnel contacts in the presence of donor–acceptor mixed interface states and interface reaction;Journal of Applied Physics;2001-01
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