Band gap widening at random CIGS grain boundary detected by valence electron energy loss spectroscopy-Reference-Cited by-同舟云学术

Band gap widening at random CIGS grain boundary detected by valence electron energy loss spectroscopy

Published:2016-10-10 Issue:15 Volume:109 Page:153103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Keller Debora¹²,Buecheler Stephan¹,Reinhard Patrick¹,Pianezzi Fabian¹,Bissig Benjamin¹,Carron Romain¹,Hage Fredrik³,Ramasse Quentin³,Erni Rolf²,Tiwari Ayodhya N.¹

Affiliation:

1. Laboratory for Thin Films and Photovoltaics, Empa - Swiss Federal Laboratories for Materials Science and Technology, Ueberlandstrasse 129, CH-8600 Duebendorf, Switzerland

2. Electron Microscopy Center, Empa - Swiss Federal Laboratories for Materials Science and Technology, Ueberlandstrasse 129, CH-8600 Duebendorf, Switzerland

3. SuperSTEM Laboratory, SciTech Daresbury Campus, Keckwick Lane, Daresbury WA4 4AD, United Kingdom

Funder

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung (SNF)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4964516

Reference15 articles.

1. Comparative atom probe study of Cu(In,Ga)Se2thin-film solar cells deposited on soda-lime glass and mild steel substrates

2. Direct Insight into Grain Boundary Reconstruction in PolycrystallineCu(In,Ga)Se2with Atomic Resolution