Appropriate analytical description of the temperature dependence of exciton peak positions in GaAs/AlxGa1−xAs multiple quantum wells and the Γ8v−Γ6c gap of GaAs-Reference-Cited by-同舟云学术

Appropriate analytical description of the temperature dependence of exciton peak positions in GaAs/AlxGa1−xAs multiple quantum wells and the Γ8v−Γ6c gap of GaAs

Published:1997-09 Issue:5 Volume:82 Page:2611-2616
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Pässler R.,Oelgart G.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.366098

Reference20 articles.

1. Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eV

2. Temperature Dependence of the Energy Gap in GaAs and GaP

3. Polariton Reflectance and Photoluminescence in High-Purity GaAs

4. Concentration dependence of the refractive index for n ‐ and p ‐type GaAs between 1.2 and 1.8 eV

5. High-precision determination of the temperature dependence of the fundamental energy gap in gallium arsenide

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