The cutoff wavelength and minority‐carrier lifetime in implantedn+‐on‐bulkpHg1−xCdxTe photodiodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341039
Reference7 articles.
1. Gate‐controlled Hg1−xCdxTe photodiodes passivated with native sulfides
2. Electrical properties of narrow gap low carrier concentration p-Hg1−xCdxTe
3. Electrical properties of shallow levels inp‐type HgCdTe
4. The exponential optical absorption band tail of Hg1−xCdxTe
5. The automatic determination of cadmium‐mercury telluride composition
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