Effect of increasing thickness on tensile-strained germanium grown on InGaAs buffer layers-Reference-Cited by-同舟云学术

Effect of increasing thickness on tensile-strained germanium grown on InGaAs buffer layers

Published:2013-05-14 Issue:18 Volume:113 Page:183508
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

de Kersauson M.,Prost M.,Ghrib A.,El Kurdi M.,Sauvage S.,Beaudoin G.,Largeau L.,Mauguin O.,Jakomin R.,Sagnes I.,Ndong G.,Chaigneau M.,Ossikovski R.,Boucaud P.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4804266

Reference32 articles.

1. III-V/silicon photonics for on-chip and intra-chip optical interconnects

2. Hybrid InP-based photonic crystal lasers on silicon on insulator wires

3. Type-I Ge∕Ge1−x−ySixSny strained-layer heterostructures with a direct Ge bandgap

4. Demonstration of a silicon Raman laser

5. Silicon-Germanium Nanostructures for Light Emitters and On-Chip Optical Interconnects

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